Measurement of Thermoelectric Properties of Single Semiconductor Nanowires
Identifieur interne : 000920 ( Main/Repository ); précédent : 000919; suivant : 000921Measurement of Thermoelectric Properties of Single Semiconductor Nanowires
Auteurs : RBID : Pascal:13-0305109Descripteurs français
- Pascal (Inist)
- Propriété thermoélectrique, Semiconducteur III-V, Nanofil, Nanomatériau, Propriété thermique, Conductivité thermique, Silicium, Arséniure d'indium, Composé III-V, Traitement thermique, Addition azote, Résistivité électrique, Effet Seebeck, Conductivité électrique, Solution analytique, Théorie diffusion, Equation diffusion, 7220P, 7350L, 8105E, 8107V.
English descriptors
- KwdEn :
- Analytical solution, Diffusion equation, Electric resistivity, Electrical conductivity, Heat treatments, III-V compound, III-V semiconductors, Indium arsenides, Nanostructured materials, Nanowires, Nitrogen additions, Scattering theory, Seebeck effect, Silicon, Thermal conductivity, Thermal properties, Thermoelectric properties.
Abstract
We have measured the thermopower and the thermal conductivity of individual silicon and indium arsenide nanowires (NWs). In this study, we evaluate a self-heating method to determine the thermal conductivity λ. Experimental validation of this method was performed on highly n-doped Si NWs with diameters ranging from 20 nm to 80 nm. The Si NWs exhibited electrical resistivity of ρ = (8 ± 4) mΩ cm at room temperature and Seebeck coefficient of -(250 ± 100) μV/K. The thermal conductivity of Si NWs measured using the proposed method is very similar to previously reported values; e.g., for Si NWs with 50 nm diameter, λ = 23 W/(m K) was obtained. Using the same method, we investigated InAs NWs with diameter of 100 nm and resistivities of ρ = (25 ± 5) mΩ cm at room temperature. Thermal conductivity of λ = 1.8 W/(m K) was obtained, which is about 20 to 30 times smaller than in bulk InAs. We analyzed the accuracy of the self-heating method by means of analytical and numerical solution of the one-dimensional (1-D) heat diffusion equation taking various loss channels into account. For our NWs suspended from the substrate with low-impedance contacts the relative error can be estimated to be ≤25%.
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Mensch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Gotsmann, B" uniqKey="Gotsmann B">B. Gotsmann</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Schmid, H" uniqKey="Schmid H">H. Schmid</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Das Kanungo, P" uniqKey="Das Kanungo P">P. Das Kanungo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Ghoneim, H" uniqKey="Ghoneim H">H. Ghoneim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Schmidt, V" uniqKey="Schmidt V">V. Schmidt</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Bjork, M T" uniqKey="Bjork M">M. T. Björk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>QuNano AB</s1><s2>22370 Lund</s2><s3>SWE</s3><sZ>8 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>QuNano AB</wicri:noRegion></affiliation></author><author><name sortKey="Troncale, V" uniqKey="Troncale V">V. Troncale</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author><author><name sortKey="Riel, H" uniqKey="Riel H">H. Riel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8803 Rüschlikon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0305109</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0305109 INIST</idno><idno type="RBID">Pascal:13-0305109</idno><idno type="wicri:Area/Main/Corpus">000725</idno><idno type="wicri:Area/Main/Repository">000920</idno></publicationStmt><seriesStmt><idno type="ISSN">0361-5235</idno><title level="j" type="abbreviated">J. electron. mater.</title><title level="j" type="main">Journal of electronic materials</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Analytical solution</term><term>Diffusion equation</term><term>Electric resistivity</term><term>Electrical conductivity</term><term>Heat treatments</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Nanostructured materials</term><term>Nanowires</term><term>Nitrogen additions</term><term>Scattering theory</term><term>Seebeck effect</term><term>Silicon</term><term>Thermal conductivity</term><term>Thermal properties</term><term>Thermoelectric properties</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Propriété thermoélectrique</term><term>Semiconducteur III-V</term><term>Nanofil</term><term>Nanomatériau</term><term>Propriété thermique</term><term>Conductivité thermique</term><term>Silicium</term><term>Arséniure d'indium</term><term>Composé III-V</term><term>Traitement thermique</term><term>Addition azote</term><term>Résistivité électrique</term><term>Effet Seebeck</term><term>Conductivité électrique</term><term>Solution analytique</term><term>Théorie diffusion</term><term>Equation diffusion</term><term>7220P</term><term>7350L</term><term>8105E</term><term>8107V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have measured the thermopower and the thermal conductivity of individual silicon and indium arsenide nanowires (NWs). In this study, we evaluate a self-heating method to determine the thermal conductivity λ. Experimental validation of this method was performed on highly n-doped Si NWs with diameters ranging from 20 nm to 80 nm. The Si NWs exhibited electrical resistivity of ρ = (8 ± 4) mΩ cm at room temperature and Seebeck coefficient of -(250 ± 100) μV/K. The thermal conductivity of Si NWs measured using the proposed method is very similar to previously reported values; e.g., for Si NWs with 50 nm diameter, λ = 23 W/(m K) was obtained. Using the same method, we investigated InAs NWs with diameter of 100 nm and resistivities of ρ = (25 ± 5) mΩ cm at room temperature. Thermal conductivity of λ = 1.8 W/(m K) was obtained, which is about 20 to 30 times smaller than in bulk InAs. We analyzed the accuracy of the self-heating method by means of analytical and numerical solution of the one-dimensional (1-D) heat diffusion equation taking various loss channels into account. For our NWs suspended from the substrate with low-impedance contacts the relative error can be estimated to be ≤25%.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0></fA01><fA02 i1="01"><s0>JECMA5</s0></fA02><fA03 i2="1"><s0>J. electron. mater.</s0></fA03><fA05><s2>42</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Measurement of Thermoelectric Properties of Single Semiconductor Nanowires</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>2012 International Conference on Thermoelectrics</s1></fA09><fA11 i1="01" i2="1"><s1>KARG (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>MENSCH (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>GOTSMANN (B.)</s1></fA11><fA11 i1="04" i2="1"><s1>SCHMID (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>DAS KANUNGO (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>GHONEIM (H.)</s1></fA11><fA11 i1="07" i2="1"><s1>SCHMIDT (V.)</s1></fA11><fA11 i1="08" i2="1"><s1>BJÖRK (M. T.)</s1></fA11><fA11 i1="09" i2="1"><s1>TRONCALE (V.)</s1></fA11><fA11 i1="10" i2="1"><s1>RIEL (H.)</s1></fA11><fA12 i1="01" i2="1"><s1>FUNAHASHI (Ryoji)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>MORELLI (Donald)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>ROSENDAHL (Lasse)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>YANG (Jihui)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>IBM Research-Zurich, Säumerstrasse 4</s1><s2>8803 Rüschlikon</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>QuNano AB</s1><s2>22370 Lund</s2><s3>SWE</s3><sZ>8 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>International Thermoelectric Society</s1><s3>INT</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Aalborg University. Department of Energy Technology</s1><s2>Aalborg</s2><s3>DNK</s3><s9>org-cong.</s9></fA18><fA20><s1>2409-2414</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>15479</s2><s5>354000503662781770</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0305109</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>We have measured the thermopower and the thermal conductivity of individual silicon and indium arsenide nanowires (NWs). In this study, we evaluate a self-heating method to determine the thermal conductivity λ. Experimental validation of this method was performed on highly n-doped Si NWs with diameters ranging from 20 nm to 80 nm. The Si NWs exhibited electrical resistivity of ρ = (8 ± 4) mΩ cm at room temperature and Seebeck coefficient of -(250 ± 100) μV/K. The thermal conductivity of Si NWs measured using the proposed method is very similar to previously reported values; e.g., for Si NWs with 50 nm diameter, λ = 23 W/(m K) was obtained. Using the same method, we investigated InAs NWs with diameter of 100 nm and resistivities of ρ = (25 ± 5) mΩ cm at room temperature. Thermal conductivity of λ = 1.8 W/(m K) was obtained, which is about 20 to 30 times smaller than in bulk InAs. We analyzed the accuracy of the self-heating method by means of analytical and numerical solution of the one-dimensional (1-D) heat diffusion equation taking various loss channels into account. For our NWs suspended from the substrate with low-impedance contacts the relative error can be estimated to be ≤25%.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B20P</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50L</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A07V</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Propriété thermoélectrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thermoelectric properties</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Nanofil</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Nanowires</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Propriété thermique</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Thermal properties</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Conductivité thermique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Thermal conductivity</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Composé III-V</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>III-V compound</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Traitement thermique</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Heat treatments</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Addition azote</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Nitrogen additions</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Résistivité électrique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electric resistivity</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Effet Seebeck</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Seebeck effect</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Solution analytique</s0><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Analytical solution</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Théorie diffusion</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Scattering theory</s0><s5>30</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Equation diffusion</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Diffusion equation</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Ecuación difusión</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>7220P</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>7350L</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8105E</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>287</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Thermoelectrics</s1><s3>Aalborg DNK</s3><s4>2012-07-09</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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